Quasi‐Single Crystalline Cuprous Oxide Wafers via Stress‐Assisted Thermal Oxidation for Optoelectronic Devices

• DOI: 10.1002/adfm.202110505
• Publication Date: 2021-12-22T12:58:05Z
• Authors: Meng Xiao; Pengbin Gui; Kailian Dong; Liangbin Xiong; Jiwei Liang; Fang Yao; Wenjing Li; Yongjie Liu; Jiashuai Li; Weijun Ke; Chen Tao; Guojia Fang
• Keywords: Thermal oxidation; Electron Mobility; Carrier lifetime

Abstract P ‐type semiconductor cuprous oxide (Cu 2 O) offers promising optoelectronic applications such as solar cells and photodetectors owing to its considerable absorption coefficients high carrier mobility. However, polycrystalline Cu O films with low mobility resulting from excessive grain boundaries structure disorder fail meet the demands for these applications. Here a stress‐assisted thermal oxidation method fabricate p <110>‐textured quasi‐single crystalline (c‐Cu wafers centimeter‐scale grains is developed. It found that strain energy induced by contact stress plays critical role in crystal growth. The resultant c‐Cu exhibit excellent crystallinity rocking curve having full width at half maximum of 0.022°, defect density × 10 11 cm −3 , exceeding 100 V −1 s long minority lifetime 98.5 µs. Such lead efficient an open‐circuit voltage 0.95 highly responsive superior cycling stability. These results indicate not only advancement fabricating high‐quality upon controllable methodology but also using metal semiconductors.