Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

• DOI: 10.1002/adfm.202208807
• Publication Date: 2022-11-01T02:40:30Z
• Authors: Xue Chen; Bingkun Chen; Bei Jiang; Tengfei Gao; Gang Shang; Su‐Ting Han; Chi‐Ching Kuo; Vellaisamy A. L. Roy; Ye Zhou
• Keywords: 02 engineering and technology; 0210 nano-technology

AbstractSimulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.