High‐Mobility Low‐Voltage ZnO and Li‐Doped ZnO Transistors Based on ZrO2 High‐k Dielectric Grown by Spray Pyrolysis in Ambient Air

• DOI: 10.1002/adma.201003935
• Publication Date: 2011-03-22T11:46:00Z
• Authors: George Adamopoulos; Stuart Thomas; Paul H. Wöbkenberg; Donal D. C. Bradley; Martyn A. McLachlan; Thomas D. Anthopo...
• Keywords: Indium tin oxide; Electron Mobility

Sequential layers of the high-k dielectric ZrO2 and electron transporting semiconductors ZnO Li-doped are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors fabricated with operating voltages below 6 V maximum mobilities on order 85 cm2 V−1 s−1.