Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

• DOI: 10.1002/adma.201603293
• Publication Date: 2016-10-17T12:17:15Z
• Authors: Sen Liu; Nianduan Lu; Xiaolong Zhao; Hui Xu; Writam Banerjee; Hangbing Lv; Shibing Long; Qingjiang Li; Qi Liu; Ming Liu
• Keywords: 02 engineering and technology; 0210 nano-technology

Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate caused by overgrowth of conductive filament (CF) into Pt electrode. The CF phenomenon suppressed and negative-SET eliminated inserting an impermeable graphene layer. graphene-based devices show high reliability satisfying performance. As a service to our authors readers, this journal provides supporting information supplied authors. Such materials are peer reviewed may be re-organized for online delivery, but not copy-edited or typeset. Technical support issues arising from (other than missing files) should addressed Please note: publisher responsible content functionality any Any queries content) directed corresponding author article.