Oxide Thin‐Film Electronics using All‐MXene Electrical Contacts

• DOI: 10.1002/adma.201706656
• Publication Date: 2018-02-23T08:02:40Z
• Authors: Zhenwei Wang; Hyunho Kim; Husam N. Alshareef
• Keywords: MXenes; Noise margin; Nanoelectronics

Abstract 2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use electronic devices is significantly less explored. The unique combination of metallic conductivity hydrophilic surface suggests that can also be promising electronics sensing Here, it Ti 3 C 2 MXene with work function 4.60 eV make good electrical contact both zinc oxide (ZnO) tin monoxide (SnO) semiconductors, negligible band offsets. Consequently, n‐type ZnO p‐type SnO thin‐film transistors (TFTs) been fabricated entirely using large‐area (Ti ) contacts, including gate, source, drain. n‐ TFTs show balanced performance, field‐effect mobilities 2.61 2.01 cm V −1 s switching ratios 3.6 × 10 6 1.1 , respectively. Further, complementary metal semiconductor (CMOS) inverters are demonstrated. CMOS large voltage gain 80 excellent noise margin 3.54 V, which 70.8% the ideal value. Moreover, operation to very stable under a 100 Hz square waveform input. current results suggest play an important role as material nanoelectronics.