Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

• DOI: 10.1002/adma.202003240
• Publication Date: 2020-08-10T06:17:02Z
• Authors: Evan J. Telford; Avalon H. Dismukes; Kihong Lee; Minghao Cheng; Andrew Wieteska; Amymarie K. Barth...; Yu‐Sheng Chen; Xiaodong Xu; Abhay N. Pasupathy; Xiaoyang Zhu; Cory R. Dean; Xavier Roy
• Keywords: Magnetism; Magnetic semiconductor

The recent discovery of magnetism within the family exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, poor charge transport properties. Here magnetic electronic properties CrSBr reported, an air-stable antiferromagnetic semiconductor that readily cleaves perpendicular stacking axis. Below its Néel temperature, TN = 132 ± 1 K, adopts A-type structure with each individual layer ferromagnetically ordered internally layers coupled antiferromagnetically along direction. Scanning tunneling spectroscopy photoluminescence (PL) reveal gap is ΔE 1.5 0.2 eV a corresponding PL peak centered at 1.25 0.07 eV. Using magnetotransport measurements, strong coupling between order demonstrated, leading large negative magnetoresistance response unique among materials. These findings establish as promising material platform increasing applicability field spin-based electronics.