Advanced Data Encryption ​using 2D Materials

• DOI: 10.1002/adma.202100185
• Publication Date: 2021-05-28T06:10:36Z
• Authors: Chao Wen; Xuehua Li; Tommaso Zanotti; Francesco Maria P...; Yuanyuan Shi; Fernan Saiz; Aleandro Antidormi; Stephan Roche; Wenwen Zheng; Xianhu Liang; Jiaxin Hu; Steffen Duhm; Juan B. Roldan; Tianru Wu; Victoria Chen; Eric Pop; Blas Garrido; Kaichen Zhu; Fei Hui; Mario Lanza
• Keywords: True random number generators; 2D materials; data encryption; hexagonal boron nitride; molecular dynamics; random telegraph noise; true random number generators;; 4. Education; Random telegraph noise; 02 engineering and technology; Molecular dynamics; 2D materials; 0210 nano-technology; Data encryption; 7. Clean energy; Hexagonal boron nitride

Abstract Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences bits. TRNG circuits with high degree randomness and low power consumption may be fabricated by using telegraph noise (RTN) current signals produced polarized metal/insulator/metal (MIM) devices as entropy source. However, RTN MIM made traditional insulators, i.e., transition metal oxides like HfO 2 Al O 3 , are not stable enough due formation lateral expansion defect clusters, resulting in undesired fluctuations disappearance effect. Here, fabrication highly consumption, (even for a long string 24 − 1 bits), throughput Mbit s −1 multilayer hexagonal boron nitride (h‐BN) is shown. Their application also demonstrated one‐time passwords, which ideal internet‐of‐everything. The superior stability h‐BN‐based related presence few‐atoms‐wide defects embedded within layered crystalline structure h‐BN stack, produces confinement effect that avoids their results operation.