Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors

• DOI: 10.1002/adma.202202472
• Publication Date: 2022-06-21T20:28:47Z
• Authors: Xinyu Wang; Xinyu Chen; Jingyi Ma; Saifei Gou; Xiaojiao Guo; Ling Tong; Junqiang Zhu; Yin Xia; Die Wang; Chuming Sheng; Honglei Chen; Zhengzong Sun; Shunli Ma; Antoine Riaud; Zihan Xu; Chunxiao Cong; Zhijun Qiu; Peng Zhou; Yufeng Xie; Lifeng Bian; Wenzhong Bao
• Keywords: Molybdenum disulfide

2D semiconductors, such as molybdenum disulfide (MoS2 ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on materials is still its early stage, mainly due to non-uniformity individual devices little investigation device circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS2 film successfully synthesized, which then used fabricate top-gated (TG) field-effect transistors with wafer-scale uniformity. Some basic static random access memory ring oscillators are examined. A pass-transistor logic configuration pseudo-NMOS employed design more complex circuits, fabricated proper functions tested. These preliminary integration efforts show promising potential semiconductors application ICs.