Large Magnetoresistance of Isolated Domain Walls in La2/3Sr1/3MnO3 Nanowires

• DOI: 10.1002/adma.202211176
• Publication Date: 2023-04-13T03:34:55Z
• Authors: Gloria Orfila; David Sanchez‐Man...; Ashima Arora; Fabian Cuellar; Sandra Ruiz‐Gómez; Sara Rodriguez‐Co...; Sandra López; Andrea Peralta; Santiago J. Carreira; Fernando Gallego; Javier Tornos; Victor Rouco; Juan J. Riquelme; Carmen Munuera; Federico J. Mompean; Mar Garcia‐Hernandez; Zouhair Sefrioui; Javier E. Villegas; Lucas Perez; Alberto Rivera‐Ca...; Carlos Leon; Sergio Valencia; Jacobo Santamaria
• Keywords: Domain wall (magnetism)

Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design efficient spintronic devices. Half-metals amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at textures. Among half metals, La1-x Srx MnO3 (LSMO) manganites considered promising candidates their robust half-metallic ground state, Curie temperature above room (Tc = 360 K, x 1/3), chemical stability. Yet wall is poorly understood, with discrepancies reported values conflicting interpretation experimental data due to entanglement various source magnetoresistance, namely, accumulation, anisotropic colossal magnetoresistance. In work, measured LSMO cross-shape nanowires single-domain nucleated across current path. Magnetoresistance 10% found originating caused by mistracking effect texture conduction electrons. Fundamentally, result shows importance on non-adiabatic processes textures despite strong Hund coupling localized t2g electrons manganite. These high enough encoding reading bits future oxide sensors.