Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions (Adv. Mater. 3/2022)

• DOI: 10.1002/adma.202270022
• Publication Date: 2022-01-21T12:49:05Z
• Authors: Alexander M. Jakob; Simon G. Robson; Vivien Schmitt; Vincent Mourik; Matthias Posselt; Daniel Spemann; Brett C. Johnson; Hannes R. Firgau; Edwin Mayes; Jeffrey C. McCallum; Andrea Morello; David N. Jamieson
• Keywords: Crystal (programming language)

Near-Surface Doping In article number 2103235, David N. Jamieson and co-workers report that single-crystal silicon can be configured with arrays of single, near-surface, dopant atoms using on-chip electrodes low-noise charge-sensitive electronics to register single-ion implants. Suitable for integration a nanostencil scanner localize the implants, system makes use signal electron–hole pairs generated as ions dissipate their kinetic energy in crystal. The part an engineering strategy high-confidence fabrication large-scale donor exploit spin ensembles devices.