Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale

• DOI: 10.1002/adma.202312736
• Publication Date: 2024-03-20T13:50:10Z
• Authors: Yu‐Ling Hsueh; Daniel Keith; Yousun Chung; Samuel K. Gorman; Ludwik Kranz; Serajum Monir; Zachary Kembrey; Joris G. Keizer; Rajib Rahman; Michelle Y. Simmons
• Keywords: Point reflection; Spin–orbit interaction

Abstract Spin‐orbit interactions arise whenever the bulk inversion symmetry and/or structural of a crystal is broken providing bridge between qubit's spin and orbital degree freedom. While strong can facilitate fast qubit operations by all‐electrical control, they also provide mechanism to couple charge noise thereby limiting lifetimes. Previously believed be negligible in silicon, recent silicon nano‐electronic devices have shown larger than spin‐orbit coupling strengths from Dresselhaus Rashba couplings. Here, it that with precision placement phosphorus atoms along [110] direction (without symmetry) or [111] (with symmetry), wide range strength achieved zero 1113 × 10 −13 eV‐cm. It atoms, local ( C 2 v , D d 3 ) changed engineer interactions. Since affect both operation lifetimes, understanding their impact essential for quantum processor design.