High‐Performance Tandem Quantum‐Dot Light‐Emitting Diodes Based on Bulk‐Heterojunction‐Like Charge‐Generation Layers

• DOI: 10.1002/adma.202313888
• Publication Date: 2024-03-16T06:22:16Z
• Authors: Taiying Zhou; Ting Wang; Jialin Bai; Shihao Liu; Hanzhuang Zhang; Wenfa Xie; Wenyu Ji
• Keywords: Tandem; Quantum Efficiency

In this study, the fundamental but previously overlooked factors of charge generation efficiency and light extraction (LEE) are explored collaboratively optimized in tandem quantum-dot light-emitting diodes (QLEDs). By spontaneously forming a microstructured interface, bulk-heterojunction-like charge-generation layer composed poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ZnO bilayer is fabricated an ideal surpassing 115% obtained. The coupling strength waveguide mode for top unit plasmon polariton loss bottom highly suppressed using precise thickness control, which increases LEE devices. red QLED achieves exceptionally low turn-on voltage electroluminescence at 4.0 V outstanding peak external quantum 42.9%. ultralow originates from sequential two emissive units QLED. Benefiting its unique electroluminescent features, easily optical-electrical dual anti-counterfeiting display built by combining dichromatic with masking technology.