Rational Design of Fluorinated 2D Polymer Film Based on Donor–Accepter Architecture toward Multilevel Memory Device for Neuromorphic Computing

• DOI: 10.1002/adma.202405328
• Publication Date: 2024-07-18T06:45:20Z
• Authors: Lei Liu; Wenyan Ji; Weixin He; Yuanzhe Cheng; Ruisha Hao; Pengyuan Hao; Huanli Dong; Xuesong Ding; Shengbin Lei; Baohang Han; Wenping Hu
• Keywords: Neuromorphic engineering; Dram; Fluorine

Abstract Fluorine‐containing 2D polymer (F‐2DP) film is a desired system to regulate the charge transport in organic electronics but rather rarely reports due limited fluorine‐containing building blocks and difficulties synthesis. Herein, novel polar molecule with antiparallel columnar stacking synthesized further embedded into an F‐2DP control over crystallinity of through self‐complementary π ‐electronic forces. The donor–accepter–accepter′–donor′ (D–A–A′–D′) structure regulates transportation efficiently, inducing multilevel memory behavior stepwise capture transfer processes. Thus, device exhibits ternary low threshold voltage ( V th1 1.1 V, th2 2.0 V), clearly distinguishable resistance states (1:10 2 :10 4 ) yield (83%). Furthermore, formation complex endows wider range conductive state, which allows its application brain‐inspired neuromorphic computing. Modified National Institute Standards Technology recognition can reach accuracy 86%, showing great potential computing applications post‐Moore era.