Dopant‐Induced Giant Photoluminescence of Monolayer MoS2 by Chemical Vapor Transport

• DOI: 10.1002/admi.202200431
• Publication Date: 2022-08-08T04:40:32Z
• Authors: Zhao Ma; Caixia Ren; Yu Wu; Hailong Qiu; Hongjun Liu; Zhanggui Hu; Yicheng Wu
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract Substitutional doping of 2D transition metal dichalcogenides (TMDCs) has been recognized as a promising strategy to tune their optoelectronic properties for wide array applications. However, controllable TMDCs remains challenging issue due the natural these materials. Here, growth Ti‐doped MoS 2 monolayers is demonstrated via chemical vapor transport method, and atomic embedded structure confirmed by scanning transmission electron microscope with probe corrector measurements. Furthermore, grown monolayer exhibits giant photoluminescence (PL), 85‐fold stronger than pristine prepared same method. The PL enhancement attributed dopant‐induced O‐Ti‐S units improved interaction between mica substrate, increasing quantum yield facilitating radiation recombination. successful improvement its optical electrical Ti may provide method engineer