Atomic Layer Deposition of Boron‐Doped Al2O3 Dielectric Films

• DOI: 10.1002/admi.202300173
• Publication Date: 2023-05-29T03:54:39Z
• Authors: Xinzhi Li; Marko Vehkamäki; Mykhailo Chundak; Kenichiro Mizohata; Anton Vihervaara; Markku Leskelä; Matti Putkonen; Mikko Ritala
• Keywords: Elastic recoil detection

Abstract This paper presents preparation of boron‐doped Al 2 O 3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures 160–300 °C are studied, giving a maximum growth per cycle (GPC) 0.77 Å at 200 °C. Field emission scanning electron microscopy (FESEM) force (AFM) used to study the surface morphology roughness films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR‐FTIR), Time‐of‐flight elastic recoil detection analysis (ToF‐ERDA), X‐ray photoelectron (XPS) composition An annealing process is carried out 450 for 1 h investigate its effect on elemental electrical properties The 70 nm thick film deposited has boron content 3.7 at.% with low leakage current density (10 −9 10 −6 A cm −2 ) when thickness nm. dielectric constant this doped 5.18.