Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons (Adv. Mater. Interfaces 21/2023)

• DOI: 10.1002/admi.202370066
• Publication Date: 2023-07-27T06:30:23Z
• Authors: Maria Mendes Martins; Piyush Kumar; Judith Woerle; Xiaojie Ni; Ulrike Grossner; Thomas Prokscha
• Keywords: Muon spin spectroscopy; Profiling (computer programming); Nanometre

Plasmonic Nanotags In article number 2300209, Maria Mendes Martins and co-workers represent here the investigation of silicon dioxide-silicon carbide (SiO2-4H-SiC) system with nanometer depth-resolution low-energy muon spin rotation spectroscopy. Approximately 100% polarized muons (μ+) are used as probes in thin films. particular, interface formed between SiO2(on top) SiC (below), understanding which is crucial for high-power device applications, studied. By measuring final state different layers, structural properties sample studied, information about electrical environment defects present can be extracted.