Highly Textured Sn‐Doped Ga2O3 Epilayers for Economically Viable Solar‐Blind Ultraviolet Photodetectors with High Responsivity

• DOI: 10.1002/adom.202500325
• Publication Date: 2025-04-02T14:02:52Z
• Authors: Nathan Episcopo; Debabrata Das; Cynthia Bowers; Krishnamurthy Mah...; Peter R. Stevenson; C. V. Ramana
• Keywords: Ultraviolet

Abstract The design and development of solar‐blind photodetectors utilizing ultrawide bandgap semiconductors have garnered significant attention due to their extensive utility in specialty commercial sectors. Solar‐blind that display excellent photosensitivity, fast response time are produced using cost‐effective fabrication steps will fulfill the performance demands relevant applications. Herein, highly textured Sn‐doped Ga 2 O 3 thin film metal‐semiconductor‐metal type deep‐UV a commercially scalable magnetron sputtering method reported. Commercially achievable growth intentionally chosen demonstrate an economically viable photodetection workflow without compromising device's performance. In‐depth structural, morphological, chemical, optical characterization reported optimize configuration for further device testing. Under transient triggering circumstances, ≈500 ms is reported, accompanied by responsivity ≈60.5 A W −1 . detectivity, external quantum efficiency, photo‐to‐dark current ratio values as 1.6 × 10 13 Jones, 2.8 4 %, 17.4, respectively. overall process UV promising. approach holds promise implications toward electronics capable functioning extreme environments exhibits substantial potential enhancing low‐cost photodetector technology.