Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3

• DOI: 10.1002/advs.202301057
• Publication Date: 2023-05-23T08:49:07Z
• Authors: Zhenwei Ou; Bin Peng; Weibin Chu; Zhe Li; Cheng Wang; Yan Zeng; Hongyi Chen; Qiuyu Wang; Guohua Dong; Yongyi Wu; Ruibin Qiu; Li Ma; Lili Zhang; Xiaoze Liu; Tao Li; Ting Yu; Zhongqiang Hu; Ti Wang; Ming Liu; Hongxing Xu
• Keywords: Electron Mobility; Ballistic conduction

Abstract The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters carrier transport behaviors sets fundamental limits to mobility. Establishing how electrons interact with phonons resulting impact on property significant for development high‐efficiency electronic devices. Here, behavior mediated by coupling in BiFeO 3 epitaxial thin films directly observed. Acoustic are generated inverse piezoelectric effect coupled photocarriers. Via coupling, doughnut shape distribution has been observed due between hot carriers phonons. quasi‐ballistic length can reach 340 nm within 1 ps. results suggest an effective approach investigating effects interactions temporal spatial resolutions, which great importance designing improving