Solution‐Processed InAs Nanowire Transistors as Microwave Switches

• DOI: 10.1002/aelm.201800323
• Publication Date: 2018-10-28T13:38:44Z
• Authors: Bobur Mirkhaydarov; Haris Votsi; Abhishek Sahu; Philippe Caroff; Paul R. Young; Vlad Stolojan; Simon G. King; Calvin C. H. Ng; Vijaya Devabhaktuni; Hoe H. Tan; Chennupati Jagadish; Peter H. Aaen; Maxim Shkunov
• Keywords: Coplanar waveguide; Biasing; Modulation (music)

Abstract The feasibility of using self‐assembled InAs nanowire bottom‐gated field‐effect transistors as radio‐frequency and microwave switches by direct integration into a transmission line is demonstrated. This proof concept demonstrated coplanar waveguide (CPW) line, where the nanowires function tunable impedance in CPW through gate biasing. key to this switching capability high‐performance, low transistor behavior with mobility ≈300 cm 2 V −1 s , on/off ratio 10 3 resistance modulation from only 50 Ω full accumulation mode, ≈50 kΩ when are depleted charge carriers. biasing within results behavior, exhibited ≈10 dB change coefficient, S 21 between states, over 5–33 GHz. frequency range covers both millimeter‐wave bands dedicated Internet things 5G applications. Demonstration these creates opportunities for new class devices applications based on solution‐processed semiconducting nanowires.