Synthesis of ZnSnN2 crystals via a high‐pressure metathesis reaction

• DOI: 10.1002/crat.201500258
• Publication Date: 2016-02-29T08:53:25Z
• Authors: F. Kawamura; N. Yamada; M. Imai; T. Taniguchi
• Keywords: Chemical Stability

The synthesis of crystals a zinc‐ and tin‐based earth‐abundant element nitride (ZnSnN 2 ) semiconductor was successfully achieved via metathesis reaction under high pressure. Pressures exceeding 5.5 GPa were required to obtain single‐phase crystals. material's bandgap determined be 1.4 eV, which is ideal for photovoltaic absorbers visible light‐active photocatalysts. decomposition temperature the material estimated approximately 350‒400 °C at atmospheric Finally, chemical stability against alkali acid solutions sufficient photocatalytic applications.