Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy

• DOI: 10.1002/crat.201570011
• Publication Date: 2015-06-05T16:14:42Z
• Authors: Valentin Garbe; Barbara Abendroth; Hartmut Stöcker; Arkadi Gavrilov; Doron Cohen‐Elias; Shlomo Mehari; Dan Ritter; Dirk C. Meyer
• Keywords: Vapor phase

As a consequence of the growth process, undoped commercially available GaN epi layers possess unintentionally incorporated dopants. Electrical and optical methods reveal doping level mobility profile which correlates to oxygen impurity distribution lattice strain