High‐mobility self‐aligned top‐gate oxide TFT for high‐resolution AM‐OLED

• DOI: 10.1002/jsid.206
• Publication Date: 2014-02-12T11:00:57Z
• Authors: Narihiro Morosawa; Masanori Nishiyama; Yoshihiro Ohshima; Ayumu Sato; Yasuhiro Terai; Kazuhiko Tokunaga; Junji Iwasaki; Keiichi Akamatsu; Yuya Kanitani; Shinji Tanaka; Toshiaki Arai; Kazumasa Nomoto
• Keywords: Oxide thin-film transistor; Indium tin oxide; AMOLED

Abstract High‐mobility and highly reliable self‐aligned top‐gate oxide thin‐film transistor (TFTs) were developed using the aluminum reaction method. Al diffusion to semiconductor homogenization of oxygen concentration in depth direction after annealing confirmed by laser‐assisted atom probe tomography. The high mobility TFT with amorphous indium tin zinc channel was demonstrated be 32 cm 2 /V s. A 9.9‐in. diagonal qHD active‐matrix organic light‐emitting diode (AM‐OLED) display fabricated a five‐mask backplane process demonstrate an applicable solution for large‐sized high‐resolution AM‐OLEDs.