On‐Chip Integrated Waveguide Amplifiers on Erbium‐Doped Thin‐Film Lithium Niobate on Insulator
Erbium
Waveguide
Net gain
DOI:
10.1002/lpor.202100030
Publication Date:
2021-06-26T19:10:37Z
AUTHORS (14)
ABSTRACT
Abstract On‐chip light amplification with integrated optical waveguide fabricated on erbium‐doped thin‐film lithium niobate insulator (TFLNOI) is demonstrated using the photolithography‐assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in small‐signal‐gain regime measured at peak emission wavelength 1530 nm for a length 3.6 cm, indicating differential per unit 5 cm −1 . This work paves way to monolithic integration diverse active and passive photonic components TFLNOI platform.
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