Narrow‐bandgap CuIn3Te5 thin‐film solar cells

• DOI: 10.1002/pip.1191
• Publication Date: 2011-10-24T06:43:50Z
• Authors: Takahiro Mise; Tokio Nakada
• Keywords: Band diagram

ABSTRACT We propose CuIn 3 Te 5 as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed grains were obtained at substrate temperature of 250 °C by single‐step co‐evaporation. The best cell that was fabricated using 4·0‐µm‐thick layers grown yielded total area efficiency 6·92% ( V oc = 407 mV, J sc 33·1 mA/cm 2 , and FF 0·514). To clarify the loss in device performance, compared with standard CuInSe reference cell. A band diagram CdS/CuIn also presented. Copyright © 2011 John Wiley & Sons, Ltd.