Investigation of Cu(In,Ga)Se2thin‐film formation during the multi‐stage co‐evaporation process

• DOI: 10.1002/pip.1233
• Publication Date: 2011-12-30T17:22:51Z
• Authors: R. Caballero; C. A. Kaufmann; V. Efimova; T. Rissom; V. Hoffmann; H. W. Schock
• Keywords: Deposition

ABSTRACT In order to transfer the potential for high efficiencies seen Cu(In,Ga)Se 2 (CIGSe) thin films from co‐evaporation processes cheaper large‐scale deposition techniques, a more intricate understanding of CIGSe growth process high‐quality material is required. Hence, mechanism chalcopyrite‐type when varying Cu content during multi‐stage studied. Break‐off experiments help understand intermediate stages thin‐film formation. The film structure and morphology are studied by X‐ray diffraction scanning electron microscopy. different phases at surface identified Raman spectroscopy. Depth‐resolved compositional analysis carried out via glow discharge optical emission spectrometry. experimental results imply an affinity Na with Cu‐poor composition, affirming possible interaction sodium vacancies mainly In(Ga) antisite defects. An efficiency 12.7% vacancy compound‐based devices obtained. Copyright © 2011 John Wiley & Sons, Ltd.