Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

• DOI: 10.1002/pip.2445
• Publication Date: 2013-11-28T06:05:18Z
• Authors: Reiner Klenk; Alexander Steigert; Thorsten Rissom; Dieter Greiner; Christian A. Kauf...; Thomas Unold; Martha Ch. Lux-St...
• Keywords: Cu(In,Ga)Se2; thin film; 0103 physical sciences; hetero junction; buffer; sputtering; 530; 01 natural sciences; 7. Clean energy; Zn(O,S)

In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)-based solar cells, commonly used sputtered undoped ZnO layer has been modified eliminate requirement for a dedicated buffer layer. After replacing target with mixed ZnO/ZnS target, efficient cells could be prepared by sputtering directly onto as-grown CIGSe surface. This approach now tested high-quality lab-scale glass/Mo/CIGSe substrates. An efficiency 18.3% independently confirmed without any post-deposition annealing or light soaking. Copyright © 2013 John Wiley & Sons, Ltd.