Highly efficient silicon heterojunction solar cells with ZnO:Al transparent electrode and transition metal doped indium oxide interfacial layer

• DOI: 10.1002/pip.3697
• Publication Date: 2023-04-06T05:49:19Z
• Authors: Gangqiang Dong; Jia Li; Yu Zhao; Xiaochao Ran; Chen‐Wei Peng; Daliang He; Chuanhong Jin; Qi Wang; Hao Jiang; Yongsheng Zhang; Xinmin Cao; Cao Yu
• Keywords: Indium tin oxide

Abstract Indium consumption is the roadblock for terawatt‐scale silicon heterojunction (SHJ) solar cells. Here, we report that M6 wafer scale SHJ cells reached an efficiency of 24.94% using room temperature DC sputtering deposited ZnO:Al (AZO) transparent electrode. Compared with indium tin oxide (ITO) standard cells, interfacial contact and smaller bandgap are observed to be main factors limit AZO cell performance. By introducing a transition metal doped (IMO) layer, significantly higher performance achieved owing better interface quality. With increasing IMO thickness, conversion surpasses ITO reference when only about 50% consumed. The certified stacked electrodes 25.62%, which one best results low‐indium present work provides novel practical solution overcome shortage resources