ZnO nanorod arrays as an antireflective coating for Cu(In,Ga)Se2 thin film solar cells

• DOI: 10.1002/pip.946
• Publication Date: 2010-03-11T10:28:22Z
• Authors: L. Aé; D. Kieven; J. Chen; R. Klenk; Th. Rissom; Y. Tang; M. Ch. Lux‐Steiner
• Keywords: Anti-reflective coating; Nanorod; Open-circuit voltage

Abstract A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se 2 thin film solar cells. This leads to a decrease of the weighted global reflectance cells from 8.6 3.5%. It boosts short‐circuit current up 5.7% without significant effect their open‐circuit voltage and fill factor (FF), which is comparable conventional optimized single layer MgF coating. The was electrochemically an aqueous solution at 80°C. capability arrays (ZNAs) may be further improved by optimization growth conditions geometry. Copyright © 2010 John Wiley & Sons, Ltd.