From oxides to selenides and sulfides: The richness of the CdI2 type crystallographic structure for thermoelectric properties

• DOI: 10.1002/pssa.201228505
• Publication Date: 2012-12-18T21:35:02Z
• Authors: S. Hébert; W. Kobayashi; H. Muguerra; Y. Bréard; N. Raghavendra; F. Gascoin; E. Guilmeau; A. Maignan
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract In this paper, we show how the thermoelectric properties can be modified in crystallographic structures based on CdI 2 type layer, by changing block layers between these or going from oxides to selenides and sulfides. case of oxides, unique generated will demonstrated Bi‐based misfit compounds. By combining Hall effect, resistivity, Seebeck coefficients single crystals family, importance doping spin orbital degeneracy term coefficient shown. From crystal investigation, power factor at 300 K is found unexpectedly constant as a function doping. To further enhance thus ZT , it necessary modify either layer perform anionic substitutions. sulfides, decrease ionic character induce electrical resistivity. Compared generally described more classical way using Boltzmann transport theory. For materials, critical parameter then thermal conductivity quantity decreased shown here intercalating Cu (Cu x TiS ), making solid solution such − Se . These two approaches here, leading close 0.5 0.4, 800 700 K, respectively.