SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

• DOI: 10.1002/pssa.202300964
• Publication Date: 2024-04-11T08:39:47Z
• Authors: Shilong Zhu; Haixia Gao; Yiwei Duan; Yifan Bai; Xuan Qiu; Xiaohua Ma; Yintang Yang
• Keywords: Random access; Resistive touchscreen

Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiN x ‐based digital‐type RRAM with analog‐type heterogeneous integration method. The Pt/SiN /Ta/Ru digital due to formation and breakage of internal silicon dangling bonds conductive filaments, TiN/SiN structure an analog traps‐filled limit region space‐charge limited current. heterogeneously integrated has good cycling stability endurance characteristics, high linearity multistate counting characteristics. This approach useful for implementation RRAM.