Electronic and optical properties of Ir3Si5

• DOI: 10.1002/pssb.200643056
• Publication Date: 2007-06-01T13:51:54Z
• Authors: D. B. Migas; V. L. Shaposhnikov; V. N. Rodin; N. N. Dorozhkin; V. E. Borisenko
• Keywords: 0103 physical sciences; 01 natural sciences

AbstractFirst‐principles calculations of the band structure and the dielectric function of Ir3Si5are presented. We find this compound to be characterized by an indirect band gap of 0.97 eV. A number of direct transitions of about 1 eV have been also determined. Features in the dependence of the imaginary and real parts of the dielectric function on photon energy are discussed in comparison with data for some other semiconducting silicides. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)