Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi2Ti2O7 high‐k gate dielectrics

• DOI: 10.1002/pssr.201206080
• Publication Date: 2012-04-10T14:15:35Z
• Authors: Kwang‐Hwan Cho; Min‐Gyu Kang; Ho Won Jang; Hyun Yong Shin; Chong‐Yun Kang; Seok‐Jin Yoon
• Keywords: Pentacene; Leakage (economics); Pulsed Laser Deposition; High-κ dielectric

Abstract We report the fabrication of organic thin‐film transistors (OTFTs) with high‐ k gate dielectrics Mn‐doped Bi 2 Ti O 7 (BTO) films. 3% BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents 2.1 × 10 –8 A/cm an applied electric field 0.3 MV/cm, while undoped show much higher 4.3 –4 . Mn doping effectively reduces number oxygen vacancies in and improves electrical properties. Low operation voltage significantly reduced are demonstrated pentacene‐based OTFTs dielectrics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)