Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

• DOI: 10.1002/pssr.201308014
• Publication Date: 2013-07-25T18:46:18Z
• Authors: A. R. Ullah; H. J. Joyce; A. M. Burke; J. Wong‐Leung; H. H. Tan; C. Jagadish; A. P. Micolich
• Keywords: Wurtzite crystal structure

Abstract magnified image We compare the electronic characteristics of nanowire field‐effect transistors made using single pure wurtzite and zincblende InAs nanowires grown from identical catalyst particles. transfer mobility versus temperature for these devices to better understand how differences in phase govern properties transistors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)