HfO2‐Based Ferroelectrics Applications in Nanoelectronics

• DOI: 10.1002/pssr.202000521
• Publication Date: 2021-01-15T19:04:39Z
• Authors: Mircea Dragoman; Martino Aldrigo; Daniela Dragoman; Sergiu Iordanescu; Adrian Dinescu; Mircea Modreanu
• Keywords: Nanoelectronics; Neuromorphic engineering

This article is dedicated to HfO 2 ‐based ferroelectrics applications in nanoelectronics, especially topics not well developed up now, such as microwaves, energy harvesting, and neuromorphic devices working artificial neurons synapses. Other well‐covered the literature, memories or negative‐capacitance ferroelectric field‐effect transistors, will be only briefly mentioned. The main impact of possibility using them for fabricating at wafer‐level complementary metal oxide semiconductor (CMOS) compatible high‐frequency devices, phase‐shifters, antenna arrays, filters with a high degree tunability miniaturization, harvesting key components. In addition, recent transfer 2D materials on has demonstrated new physical effects, opening 0.2 eV bandgap graphene monolayers, allows manufacture very high‐mobility transistors (FETs) based graphene/HfZrO.