Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

• DOI: 10.1002/pssr.202000538
• Publication Date: 2021-03-01T09:54:18Z
• Authors: Damien Térébénec; Niccolo Castellani; Nicolas Bernier; Vitomir Sever; Philippe Kowalczyk; Mathieu Bernard; Marie-Claire Cyrille; Nguyet-Phuong Tran; Françoise Hippert; Pierre Noé
• Keywords: Phase-change memory

GeTe/Sb 2 Te 3 superlattices (SLs) obtained by sputtering are integrated in phase‐change memory (PCM) devices with a “wall structure”. The high structural quality of SLs deposited on TiN or SiN x layers, used as metallic bottom heater and dielectric layer PCM devices, is established X‐ray diffraction, for as‐grown after an annealing corresponding to the maximum thermal budget during integration process. Scanning transmission electron microscopy (STEM) images within cells confirm that SL structure kept integration. A robust statistical analysis large number demonstrates unambiguously RESET current lower than GeTe reference decreases when Sb thickness increases from 8 nm. STEM imaging cell incorporating switching low‐ high‐resistance state occurs through melting–quenching process not due crystal–crystal transition defect reorganization SL, contrast what commonly stated literature interfacial memories (iPCMs). origin improved performance SL‐based discussed, linked impact swapped bilayers.