Artificial optoelectronic synapses based on Ga2O3 metal–semiconductor–metal solar‐blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing

• DOI: 10.1002/rpm.20240038
• Publication Date: 2025-03-11T13:05:24Z
• Authors: Huazhen Sun; Bingjie Ye; Mei Ge; Biao Gong; Leyang Qian; Irina N. Parkhomenko; Fadei F. Komarov; Yu Liu; Guofeng Yang
• Keywords: Neuromorphic engineering; Ultraviolet

Abstract Research on optoelectronic synapses that can integrate both detection and processing functions is essential for the development of efficient neuromorphic computing. Here, we experimentally demonstrated an Ga 2 O 3 ‐based metal–semiconductor–metal (MSM) solar‐blind ultraviolet (UV) photodetector (PD) with asymmetric interdigital electrodes. The PD exhibits a responsivity 732 A/W under forward bias 6 V. tunable conductance properties PDs provide novel approach to synaptic performance. proposed as artificial synapse realized several function, including excitatory postsynaptic current, paired‐pulse facilitation, long‐term potentiation, transition from short‐term memory memory, learning experience behaviors successfully. At reverse bias, ultra‐low energy consumption 140 fJ was achieved. In addition, recognition accuracy over 95% in MNIST handwritten number task. These results suggest MSM UV have high potential computing applications.