XRD, AFM and IR investigations of ordered AlGaAs2 phase in epitaxial AlxGa1–xAs/GaAs (100) heterostructures

• DOI: 10.1002/sia.2306
• Publication Date: 2006-03-29T10:57:49Z
• Authors: E. P. Domashevskaya; P. V. Seredin; A. N. Lukin; L. A. Bityutskaya; M. V. Grechkina; I. N. Arsentyev; D. A. Vinokurov; I. S. Tarasov
• Keywords: Lattice constant; Superstructure; Lattice (music)

Abstract The lattice constant of Al x Ga 1− As epitaxial alloys with various Al‐As( ) content is determined for As/GaAs (100) heterostructures grown by MOVPE epitaxy using X‐ray diffractometry and back‐reflections method. An ordered AlGaAs 2 (superstructural) phase was found in ∼ 0.50. this along c axis smaller than the double constants an 0.50 alloy. Infrared (IR) reflection spectra vibrations were investigated different concentrations cation sublattice. In sample 0.50, besides two main vibration modes some additional ones that correspond to superstructure . Atomic‐force microscopy (AFM) surface demonstrated presence areas nano‐relief having period ∼115 nm can be related Copyright © 2006 John Wiley & Sons, Ltd.