Application of extra‐low impact energy SIMS and data reduction algorithm to USJ profiling

• DOI: 10.1002/sia.5138
• Publication Date: 2012-08-06T03:11:11Z
• Authors: D. Kouzminov; A. Merkulov; E. Arevalo; H.‐J. Grossmann
• Keywords: Profiling (computer programming)

Secondary ion mass spectrometry analysis of ultra-shallow (sub-200 eV) B implants is complicated by the presence native oxide on surface Si. Knowledge type present as well accurate thickness very important for correct data reduction in extra-low energy depth profiling. Sputter rate (SR) variation approach based SR measurement Si and SiO2 can be successfully applied to done through thermal oxides various thicknesses. Lowest profiling should used achieve least profile distortion case de-channeled implants: rule half implant confirmed. Profiling that equal if implantation or into stripped If no surface, most consistent result will obtained when are pre-stripped thus eliminating uncontrollable variable oxide-related issues. Copyright © 2012 John Wiley & Sons, Ltd.