Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors

• DOI: 10.1002/smsc.202400367
• Publication Date: 2024-10-06T19:19:26Z
• Authors: Batu Ghosh; Hiroyuki Yamada; Kazuhiro Nemoto; Wipakorn Jevasuwan; Naoki Fukata; Hon‐Tao Sun; Naoto Shirahata
• Keywords: Homojunction; Photodiode

Semiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits optoelectronic applications. However, it has been so far limited to bulk form single crystals such as silicon (Si) or gallium arsenide. Herein, brand‐new method constructing architectures that breaks through limitation presented. Colloidal inks p‐type n‐type Si quantum dots (QDs) are synthesized by thermal disproportionation (HSiO 1.5 ) n doped with boron phosphorus, followed surface ligand engineering. Analysis combining UV photoelectron spectroscopy, electron spin resonance, current–voltage characteristics confirms an orthogonal solvent trick makes clean interfaces between SiQD layers without disruption on film formation. The forward reverse diode, along various spectroscopic characterizations, demonstrate formation first SiQDs. self‐powered photodiode provides tunable response specific wavelength.