High Efficiency Solar Cell Based on Full PVD Processed Cu(In,Ga)Se2/CdIn2S4 Heterojunction

• DOI: 10.1002/solr.201700140
• Publication Date: 2017-10-10T06:02:44Z
• Authors: Nicolas Barreau; Agathe Frelon; Thomas Lepetit; Eric Gautron; Nicolas Gautier; Rodrigo Ribeiro‐A...; Nicoleta Nicoara; Sascha Sadewasser; Pawel Zabierowski; Ludovic Arzel; Léo Choubrac; Sylvie Harel; Catherine Deudon; Camille Latouche; Stéphane Jobic; Maite Caldes; Lionel Assmann; Polyxeni Tsoulka; Emmanuel V. Péan; Justine Lorthioir; Frédéric Geschier; Isabelle Braems; Matthieu Moret; Olivier Briot; Guy Ouvrard
• Keywords: Stoichiometry

The original goal of our study is to synthesize by co‐evaporation the phase that could be formed at interface between polycrystalline p‐Cu(In,Ga)Se 2 treated with KF and n‐CdS. Hence, a new buffer layer, CdIn S 4 (C24), deposited presented for use in thin film solar cells, exhibiting device efficiencies as high 16.2%, comparable obtained on reference standard CdS‐buffered device. physico‐chemical optical properties close stoichiometry 400 nm‐thick films C24 show similar what has been reported literature single crystals. layer stack used cells investigated transmission electron microscopy, showing formation an ultrathin Cd‐deficient CIGSe/C24 interface, while clear lattice match observed C24/ZnO interface. Advanced electrical characterizations devices suggest output voltage fill factor based Cu(In,Ga)Se /(PVD)C24 are limited tunneling‐enhanced recombination through extended band tail states. These results open routes explain superiority wet processes junction compared vacuum‐based approaches.