Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

• DOI: 10.1002/sstr.202300524
• Publication Date: 2024-04-04T03:24:35Z
• Authors: Bo Wei Zhang; Chun‐Ho Lin; Shruti Nirantar; EQ Han; Yurou Zhang; Zitong Wang; Miaoqiang Lyu; Lianzhou Wang
• Keywords: Lead (geology)

Memristive devices such as resistive switching memories and artificial synapses have emerged promising technologies to overcome the technological challenges associated with von Neumann bottleneck. Recently, lead halide perovskites drawn substantial research attention candidate material for memristors due their unique optoelectronic properties, solution processability, mechanical flexibility. However, toxicity of lead‐containing species has raised major concerns health environment, which makes it crucial transition from lead‐based lead‐free materials practical applications. Herein, recent progress metal halides including perovskite analogs memory synapse is reviewed. Initially, fundamentals mechanisms are introduced. Next, design, fabrication technique, device performance summarized critically evaluated each species. Finally, toward outlined discussed, some potential directions future study proposed.