Residual stresses in evaporated AI-Si films

• DOI: 10.1007/bf02319696
• Publication Date: 2006-02-15T10:30:56Z
• Authors: N. G. Wu; Q. K. Yuan

Residual stresses in vacuum evaporated thin Al-Si films were evaluated by measuring the deflection of a thin cantilevered substrate during removal of the film. Post-thermal treatment and thermal cyclings at temperatures between −269° C and 560° C were also introduced to determine their effects on the residual stresses of the films.