Thermoelectric properties of porous silicon

• DOI: 10.1007/s00339-012-6879-5
• Publication Date: 2012-03-23T09:34:13Z
• Authors: J. Boor; D. S. Kim; X. Ao; M. Becker; N. F. Hinsche; I. Mertig; P. Zahn; V. Schmidt
• Keywords: Passivation; Porous Silicon

We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.