Structure and dielectric properties of barium strontium titanate ferroelectric thin film prepared by DC micro-arc oxidation

• DOI: 10.1007/s00339-020-03937-0
• Publication Date: 2020-09-02T05:02:22Z
• Authors: Min Wang; Wenfang Li; Xi Zuo; Wen Zhu; Guoge Zhang
• Keywords: Strontium titanate; Barium

Barium–strontium titanate (BST) ferroelectric thin film was fabricated on Ti substrates by micro-arc oxidation (MAO) in an aqueous solution consisting of 0.6 mol/L Ba(OH)2·8H2O and 0.4 mol/L Sr(OH)2·8H2O. The phase composition, elements distribution, dielectric and ferroelectric properties of the BST thin film were characterized. The results show that the BST film is mainly composed of BaxSr(1−x)TiO3 phase. The Ba, Sr, Ti and O elements are generally uniformly distributed across the film, and the local fluctuation of elements distribution may be caused by MAO holes in the membrane. The BST film is mainly deposited through an electrophoretic process. The dielectric constant of the BST thin film is about 283 measured at 1 kHz, and the film has ferroelectric property at room temperature because of the misfit strain in the film.