Gm-boosted current-reuse inductive-peaking common source LNA for 3.1–10.6 GHz UWB wireless applications in 32 nm CMOS

• DOI: 10.1007/s10470-018-1290-6
• Publication Date: 2018-08-14T09:46:17Z
• Authors: Vikram Singh; Sandeep Kumar Arya; Manoj Kumar
• Keywords: Wideband; Reflection coefficient

A low power, low noise amplifier (LNA) for 3.1–10.6 GHz ultra-wideband (UWB) wireless applications is reported in this paper. The proposed LNA is designed using common source (CS) current-reused architecture. Flat and high power gain (S21) with constant noise figure (NF) is achieved using series inductive peaking between CS primary stage and the current reused second stage. Input–output matching networks have been used to achieve acceptable values of input reflection coefficient (S11) and output reflection coefficient (S22) for the complete UWB frequency range. The use of inductive peaking with current reused architecture enhances the overall performance of proposed ultra-wideband LNA. The LNA is analyzed and designed using 32 nm CMOS process. It has a constant NF of 2.7 dB, a high and flat S21 of 23.8 ± 0.7 dB with high reverse isolation (S12) of < − 37.3 dB. The proposed LNA provides acceptable results for S11 and S22 parameters with values less than − 7.5 and − 11.0 dB respectively, for the UWB frequency range of 3.1–10.6 GHz. The proposed LNA provides 1-dB compression point (P1dB) of − 20 dBm and third order intercept point (IIP3) of − 10 dBm. The power consumed by the reported LNA is only 8.05 mW for a 0.7 V power supply.