Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study

• DOI: 10.1007/s10825-019-01383-7
• Publication Date: 2019-08-02T10:50:44Z
• Authors: Zeheng Wang
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

A novel recess-free enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) is proposed. The device features a field-assembled structure (FAS) consisting of one short Schottky source finger as well as an overlying gate, which can modulate the potential beneath the source. This structure enables manipulation of the source barrier height and thus modulation of the current through the reverse source-to-drain Schottky barrier diode. According to the analytical model and detailed simulations, the proposed FAS–HEMT has great potential for use in power converters, monolithic microwave integrated circuits, and other applications.