The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method

Crucible (geodemography)
DOI: 10.1007/s10832-007-9349-2 Publication Date: 2007-10-29T14:07:31Z
ABSTRACT
The influence of growth atmosphere and Ir contamination on electrical resistivity of langatate (La3Ta0.5Ga5.5O14; LTG) was studied. LTG single crystals were grown via the Czochralski method under different oxygen partial pressures with Ir contamination from the Ir crucible. In addition, LTG crystals were grown by the floating zone method and they were not contaminated by Ir. The electrical resistivity and ionic transport number of these crystals were measured in the temperature range 300–1000°C. The conduction mechanism of LTG changed at about 720°C. At T 720°C, ionic conduction was dominant, and the resistivity was affected only by Ir contamination. In both temperature regions, Ir contamination decreased the resistivity by an order of magnitude.
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