The influence of substrate temperature on the properties of aluminum-doped zinc oxide thin films deposited by DC magnetron sputtering
Wurtzite crystal structure
DOI:
10.1007/s10854-006-9039-x
Publication Date:
2006-09-06T14:49:00Z
AUTHORS (3)
ABSTRACT
Transparent, conducting, aluminum-doped zinc oxide (AZO) thin films were deposited on Corning 1737 glass by a DC magnetron sputter. The structural, electrical, and optical properties of the films, using various substrate temperatures, investigated. AZO fabricated with an ceramic target (Al2O3:2 wt%). obtained polycrystalline hexagonal wurtzite structure preferentially oriented in (002) crystallographic direction. lowest resistivity was 6.0 × 10−4Ω cm, carrier concentration 2.7 1020 cm−3 Hall mobility 20.4 cm2/Vs. average transmittance visible range above 90%.
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