Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

• DOI: 10.1007/s10854-012-0987-z
• Publication Date: 2012-11-16T17:29:23Z
• Authors: Dongsheng Fan; Zhaoquan Zeng; Vitaliy G. Dorogan; Yusuke Hirono; Chen Li; Yuriy I. Mazur; Shui-Qing Yu; Shane R. Johnson; Zhiming M. Wang; Gregory J. Salamo
• Keywords: Bismuth

This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.