Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling

• DOI: 10.1007/s10854-014-1707-7
• Publication Date: 2014-01-07T18:49:29Z
• Authors: Z. Zhou; O. Obi; T. X. Nan; S. Beguhn; J. Lou; X. Yang; Y. Gao; M. Li; S. Rand; H. Lin; N. X. Sun; G. Esteves; K. Nittala; J. L. Jones; K. Mahalingam; M. Liu; G. J. Brown
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

We report low-temperature spin spray deposited Fe3O4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 °C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O4/ZnO ME heterostructures have much lower deposition temperature (<100 °C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.